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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPP023NE7N3 G
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IPP023NE7N3 G

Manufacturer Part Number IPP023NE7N3 G
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 75V 120A TO220
Package
In Stock 3773 pcs
Data sheet IPP023NE7N3 G, IPI023NE7N3 G
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Test 14400pF @ 37.5V
Voltage - Breakdown -
Vgs(th) (Max) @ Id 2.3 mOhm @ 100A, 10V
Technology MOSFET (Metal Oxide)
Series OptiMOS™
RoHS Status Cut Tape (CT)
Rds On (Max) @ Id, Vgs 120A (Tc)
Polarization TO-220-3
Other Names IPP023NE7N3 GCT
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IPP023NE7N3 G
Input Capacitance (Ciss) (Max) @ Vds 206nC @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.8V @ 273µA
FET Feature N-Channel
Expanded Description N-Channel 75V 120A (Tc) 300W (Tc) Through Hole
Drain to Source Voltage (Vdss) -
Description MOSFET N-CH 75V 120A TO220
Current - Continuous Drain (Id) @ 25°C 75V
Capacitance Ratio 300W (Tc)

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IPP023NE7N3 G Datasheet PDF

Data sheet